

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
LED driver
Power management
High-side loadswitch
Switching circuits
Low threshold voltage
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
LED driver
Power management
High-side loadswitch
Switching circuits

P-Channel MOSFET, 5.6 A, -20 V, 3-Pin SOT-23 PMV27UPEAR
Manufacturer:
Nexperia
Manufacturer Part No:
PMV27UPEAR
Enrgtech Part No:
ET16800557
Warranty:
Manufacturer
£ 0.32
Checking for live stock
Channel Type:
P
Maximum Continuous Drain Current:
5.6 A
Maximum Drain Source Voltage:
-20 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
63 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
-0.95V
Minimum Gate Threshold Voltage:
-0.45V
Maximum Power Dissipation:
4150 mW
Transistor Configuration:
Single