N-Channel MOSFET, 24 A, 30 V, 8-Pin SOIC IRF8788TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

24 A

Maximum Drain Source Voltage:

30 V

Series:

HEXFET

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

3.8 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.35V

Minimum Gate Threshold Voltage:

1.35V

Maximum Power Dissipation:

2.5 W

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Width:

4mm

Length:

5mm

Typical Gate Charge @ Vgs:

44 nC @ 4.5 V

Maximum Operating Temperature:

+150 °C

Forward Diode Voltage:

1V

Height:

1.5mm

Minimum Operating Temperature:

-55 °C