siss5710dn-t1-ge3 Vishay Dual Silicon N-Channel MOSFET, 26.2 A, 150 V, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

Vishay Dual Silicon N-Channel MOSFET, 26.2 A, 150 V, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

For more information please check the datasheets.

Vishay Dual Silicon N-Channel MOSFET, 26.2 A, 150 V, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SISS5710DN-T1-GE3

Enrgtech Part No:

ET26056180

Warranty:

Manufacturer

£ 0.6000

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Channel Type:

Maximum Continuous Drain Current:

26.2 A

Maximum Drain Source Voltage:

150 V

Package Type:

PowerPAK 1212-8S

Mounting Type:

Surface Mount

Pin Count:

Channel Mode:

Enhancement

Number of Elements per Chip:

Transistor Material:

Silicon

A700000009890799.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay Dual Silicon N-Channel MOSFET, 26.2 A, 150 V, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

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