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siss5710dn-t1-ge3 Dual Silicon N-Channel MOSFET, 26.2 A, 150 V, 8-Pin PowerPAK 1212-8S Vishay SISS5710DN-T1-GE3
siss5710dn-t1-ge3 Dual Silicon N-Channel MOSFET, 26.2 A, 150 V, 8-Pin PowerPAK 1212-8S Vishay SISS5710DN-T1-GE3
siss5710dn-t1-ge3 Dual Silicon N-Channel MOSFET, 26.2 A, 150 V, 8-Pin PowerPAK 1212-8S Vishay SISS5710DN-T1-GE3
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies. Very low figure of merit
ROHS compliant
UIS tested 100 percent
Vishay

Dual Silicon N-Channel MOSFET, 26.2 A, 150 V, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SISS5710DN-T1-GE3
Enrgtech Part No:
ET26056180
Warranty:
Manufacturer
£ 0.44

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Channel Type:

N

Maximum Continuous Drain Current:

26.2 A

Maximum Drain Source Voltage:

150 V

Package Type:

PowerPAK 1212-8S

Mounting Type:

Surface Mount

Pin Count:

8

Channel Mode:

Enhancement

Number of Elements per Chip:

2

Transistor Material:

Silicon

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