OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on).
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 43% from previous generation
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 43% from previous generation
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 IPB020N10N5ATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPB020N10N5ATMA1
Enrgtech Part No:
ET16823515
Warranty:
Manufacturer
£ 2.17
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
176 A
Maximum Drain Source Voltage:
100 V
Series:
OptiMOS™ 5
Package Type:
TO 263
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
2.5 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.8V
Minimum Gate Threshold Voltage:
2.2V
Maximum Power Dissipation:
375 W
