N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC IRF7749L1TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

375 A

Maximum Drain Source Voltage:

60 V

Package Type:

DirectFET ISOMETRIC

Series:

DirectFET, HEXFET

Mounting Type:

Surface Mount

Maximum Drain Source Resistance:

1.5 mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation:

125 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Transistor Material:

Si

Width:

7.1mm

Typical Gate Charge @ Vgs:

200 nC @ 10 V

Length:

9.15mm

Maximum Operating Temperature:

+175 °C

Height:

0.49mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1.3V