P-Channel MOSFET, 16.2 A, 150 V, 8-Pin PowerPAK 1212-8S SISS73DN-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

16.2 A

Maximum Drain Source Voltage:

150 V

Package Type:

PowerPAK 1212-8S

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

125 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

65.8 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

±20 V

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Width:

3.3mm

Typical Gate Charge @ Vgs:

14.6 nC @ 10 V

Length:

3.3mm

Forward Diode Voltage:

1.2V

Height:

0.78mm

Minimum Operating Temperature:

-55 °C