P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 BSP322PH6327XTSA1

Channel Type:

P

Maximum Continuous Drain Current:

1 A

Maximum Drain Source Voltage:

100 V

Package Type:

SOT-223

Series:

SIPMOS®

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

800 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

1.8 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

12.4 nC @ 10 V

Length:

6.5mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Width:

3.5mm

Number of Elements per Chip:

1

Height:

1.6mm

Minimum Operating Temperature:

-55 °C