Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1

Channel Type:

N

Maximum Continuous Drain Current:

950 mA

Maximum Drain Source Voltage:

20 V

Series:

OptiMOS™ 2

Package Type:

SOT-363

Mounting Type:

Surface Mount

Pin Count:

6

Maximum Drain Source Resistance:

600 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1.2V

Minimum Gate Threshold Voltage:

0.7V

Maximum Power Dissipation:

500 mW

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-12 V, +12 V

Width:

1.25mm

Number of Elements per Chip:

2

Length:

2mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

0.32 nC @ 4.5 V

Minimum Operating Temperature:

-55 °C

Height:

0.8mm