N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK SQD50034E_GE3

Channel Type:

N

Maximum Continuous Drain Current:

100 A

Maximum Drain Source Voltage:

60 V

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

7.9 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Minimum Gate Threshold Voltage:

2.5V

Maximum Power Dissipation:

107 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

±20 V

Typical Gate Charge @ Vgs:

58 nC @ 10 V

Length:

10.41mm

Width:

9.65mm

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Automotive Standard:

AEC-Q101

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1.5V

Height:

4.57mm