Silicon N-Channel MOSFET, 12 A, 1200 V, 3-Pin H²PAK-2 STMicroelectronics STH13N120K5-2AG | STH13N120K5-2AG | ET19195213

The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency. AEC Q101 qualified
Industry’s lowest RDS(on) x area
Industry’s best FoM
Ultra low gate charge
100% avalanche tested
Zener protected

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Silicon N-Channel MOSFET, 12 A, 1200 V, 3-Pin H²PAK-2 STH13N120K5-2AG

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