Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
The ON Semiconductor NTH series SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 31A
Drain to source on resistance rating is 110mohm
High speed switching and low capacitance
100% UIL tested
Low effective output capacitance
Package type is TO-247-3LD
Drain to source on resistance rating is 110mohm
High speed switching and low capacitance
100% UIL tested
Low effective output capacitance
Package type is TO-247-3LD
SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A
Manufacturer:
onsemi
Manufacturer Part No:
NTHL080N120SC1A
Enrgtech Part No:
ET20075710
Warranty:
Manufacturer
£ 4.77
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
31 A
Maximum Drain Source Voltage:
1200 V
Series:
NTH
Package Type:
TO-247
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
110 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Transistor Material:
SiC
Number of Elements per Chip:
1
