N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB SIHP8N50D-GE3

Channel Type:

N

Maximum Continuous Drain Current:

8.7 A

Maximum Drain Source Voltage:

500 V

Package Type:

TO-220AB

Series:

D Series

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

850 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

156 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

15 nC @ 10 V

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Length:

10.51mm

Width:

4.65mm

Height:

9.01mm

Minimum Operating Temperature:

-55 °C