This Infineon HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has fast switching speed and improved repetitive avalanche rating.
It is Lead-free
It is capable of being wave soldered
It is capable of being wave soldered
N-Channel MOSFET, 170 A, 75 V, 3-Pin D2PAK IRF2907ZSTRLPBF
Manufacturer:
InfineonManufacturer Part No:
IRF2907ZSTRLPBF
Enrgtech Part No:
ET21605545
Warranty:
Manufacturer
£ 3.20
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Channel Type:
N
Maximum Continuous Drain Current:
170 A
Maximum Drain Source Voltage:
75 V
Package Type:
D2PAK (TO-263)
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.0045 Ω
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
