Silicon N-Channel MOSFET, 9.4 A, 700 V, 3-Pin SOT-223 Infineon IPN70R1K2P7SATMA1 | IPN70R1K2P7SATMA1 | ET21632813

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc. Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour

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Silicon N-Channel MOSFET, 9.4 A, 700 V, 3-Pin SOT-223 IPN70R1K2P7SATMA1

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