The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Silicon N-Channel MOSFET, 9.4 A, 700 V, 3-Pin SOT-223 IPN70R1K2P7SATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPN70R1K2P7SATMA1
Enrgtech Part No:
ET21632813
Warranty:
Manufacturer
£ 0.12
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
9.4 A
Maximum Drain Source Voltage:
700 V
Package Type:
SOT-223
Series:
CoolMOS™
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
1.2 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.5V
Number of Elements per Chip:
1
Transistor Material:
Silicon
