The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
Automotive Qualified
Ultra Low On-Resistance
Automotive Qualified
N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK AUIRFR540Z
Manufacturer:
Infineon
Manufacturer Part No:
AUIRFR540Z
Enrgtech Part No:
ET21606498
Warranty:
Manufacturer
£ 0.57
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Channel Type:
N
Maximum Continuous Drain Current:
35 A
Maximum Drain Source Voltage:
100 V
Series:
HEXFET
Package Type:
DPAK (TO-252)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.0285 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Transistor Material:
Si
