The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
SiC N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK STB37N60DM2AG
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STB37N60DM2AG
Enrgtech Part No:
ET12275781
Warranty:
Manufacturer
£ 3.06
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Channel Type:
N
Maximum Continuous Drain Current:
28 A
Maximum Drain Source Voltage:
600 V
Series:
STB37N60
Package Type:
D2PAK (TO-263)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.094 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.9V
Number of Elements per Chip:
1
Transistor Material:
SiC
