The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
100% avalanche tested
Qualified according to JEDEC for target applications
Qualified according to JEDEC for target applications
N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB024N10N5ATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPB024N10N5ATMA1
Enrgtech Part No:
ET21606523
Warranty:
Manufacturer
£ 1.15
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Channel Type:
N
Maximum Continuous Drain Current:
180 A
Maximum Drain Source Voltage:
100 V
Package Type:
TO-263-7
Series:
OptiMOS™ 5
Mounting Type:
Surface Mount
Pin Count:
7
Maximum Drain Source Resistance:
0.0024 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.8V
Number of Elements per Chip:
1
Transistor Material:
Si
