The Infineon OptiMOS™ 5 N-channel power MOSFET has 25 V drain source voltage (VDS) & 134 A drain current (ID). It offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. It has best-in-class on-state resistance and have broader use in desktop and server, high power density voltage regulator, etc.
Optimized for high performance buck converters
Monolithic integrated schottky like diode
Very low on-resistance RDS(on)@VGS = 4.5V
100% avalanche tested
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
Monolithic integrated schottky like diode
Very low on-resistance RDS(on)@VGS = 4.5V
100% avalanche tested
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
N-Channel MOSFET, 134 A, 25 V, 8-Pin SuperSO8 5 x 6 BSZ017NE2LS5IATMA1
Manufacturer:
Infineon
Manufacturer Part No:
BSZ017NE2LS5IATMA1
Enrgtech Part No:
ET24126075
Warranty:
Manufacturer
£ 0.97
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
134 A
Maximum Drain Source Voltage:
25 V
Package Type:
SuperSO8 5 x 6
Mounting Type:
Surface Mount
Pin Count:
8
Number of Elements per Chip:
1
