

P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 IRLML6401TRPBF
Manufacturer:
InfineonManufacturer Part No:
IRLML6401TRPBF
Enrgtech Part No:
ET13820584
Warranty:
Manufacturer
£ 0.34
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Channel Type:
P
Maximum Continuous Drain Current:
4.3 A
Maximum Drain Source Voltage:
12 V
Series:
HEXFET
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
50 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
0.95V
Minimum Gate Threshold Voltage:
0.4V
Maximum Power Dissipation:
1.3 W