Deliver to United Kingdom

Oops! We're currently experiencing technical difficulties with our checkout process. For assistance, please contact support at info@enrgtechglobal.com.

ipg20n06s4l11aatma1 Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual Infineon IPG20N06S4L11AATMA1
ipg20n06s4l11aatma1 Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual Infineon IPG20N06S4L11AATMA1
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Logic Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements. The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
Infineon

Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPG20N06S4L11AATMA1
Enrgtech Part No:
ET21606548
Warranty:
Manufacturer
£ 0.43

Checking for live stock

Channel Type:

N

Maximum Continuous Drain Current:

20 A

Maximum Drain Source Voltage:

60 V

Series:

OptiMOS™ -T2

Package Type:

SuperSO8 5 x 6 Dual

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

0.0112 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.2V

Transistor Material:

Si

Number of Elements per Chip:

2

Related products