Dual N/P-Channel-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 FDG6332C

Channel Type:

N, P

Maximum Continuous Drain Current:

600 mA, 700 mA

Maximum Drain Source Voltage:

20 V

Package Type:

SOT-363

Mounting Type:

Surface Mount

Pin Count:

6

Maximum Drain Source Resistance:

442 mΩ, 700 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

0.3V

Maximum Power Dissipation:

300 mW

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-12 V, +12 V

Typical Gate Charge @ Vgs:

1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V

Width:

1.25mm

Number of Elements per Chip:

2

Maximum Operating Temperature:

+150 °C

Transistor Material:

Si

Length:

2mm

Minimum Operating Temperature:

-55 °C

Height:

1mm