The Infineon 600V CoolMOS™ P7 series N-channel power MOSFET. It has extremely low switching and conduction losses which makes switching applications even more efficient, more compact and much cooler. The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness >2kV (HBM) for all products
Significant reduction of switching and conduction losses
Excellent ESD robustness >2kV (HBM) for all products
N-Channel MOSFET, 9 A, 650 V, 3-Pin TO-220 FP IPAW60R360P7SXKSA1
Manufacturer:
Infineon
Manufacturer Part No:
IPAW60R360P7SXKSA1
Enrgtech Part No:
ET21617586
Warranty:
Manufacturer
£ 0.30
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Channel Type:
N
Maximum Continuous Drain Current:
9 A
Maximum Drain Source Voltage:
650 V
Series:
CoolMOS™ P7
Package Type:
TO-220 FP
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.36 Ω
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Transistor Material:
Si
