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ipb011n04lgatma1 Dual N-Channel MOSFET Transistor & Diode, 180 A, 40 V, 7-Pin D2PAK Infineon IPB011N04LGATMA1
ipb011n04lgatma1 Dual N-Channel MOSFET Transistor & Diode, 180 A, 40 V, 7-Pin D2PAK Infineon IPB011N04LGATMA1
The Infineon OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Ideal for fast switching applications
RoHS compliant - halogen free
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
Infineon

Dual N-Channel MOSFET Transistor & Diode, 180 A, 40 V, 7-Pin D2PAK IPB011N04LGATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB011N04LGATMA1
Enrgtech Part No:
ET21626881
Warranty:
Manufacturer
£ 1.08

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Channel Type:

N

Maximum Continuous Drain Current:

180 A

Maximum Drain Source Voltage:

40 V

Series:

OptiMOS™ 5

Package Type:

TO-263-7

Mounting Type:

Surface Mount

Pin Count:

7

Maximum Drain Source Resistance:

0.0011 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Number of Elements per Chip:

2

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