P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 SI2301CDS-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

2.3 A

Maximum Drain Source Voltage:

20 V

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

112 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

0.4V

Maximum Power Dissipation:

860 mW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-8 V, +8 V

Width:

1.4mm

Length:

3.04mm

Transistor Material:

Si

Typical Gate Charge @ Vgs:

3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V

Number of Elements per Chip:

1

Maximum Operating Temperature:

+150 °C

Height:

1.02mm

Minimum Operating Temperature:

-55 °C