N-Channel MOSFET, 8.5 A, 60 V, 8-Pin SOIC SI4850EY-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

8.5 A

Maximum Drain Source Voltage:

60 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

47 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

3.3 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Transistor Material:

Si

Length:

5mm

Typical Gate Charge @ Vgs:

18 nC @ 10 V

Width:

4mm

Height:

1.5mm

Minimum Operating Temperature:

-55 °C