The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns
Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
Silicon N-Channel MOSFET, 50 A, 650 V, 3-Pin TO 263 IPB60R040C7ATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPB60R040C7ATMA1
Enrgtech Part No:
ET21632795
Warranty:
Manufacturer
£ 3.35
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Channel Type:
N
Maximum Continuous Drain Current:
50 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO 263
Series:
CoolMOS™
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.04 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Transistor Material:
Silicon
Number of Elements per Chip:
1
