N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 SCT30N120

Channel Type:

N

Maximum Continuous Drain Current:

45 A

Maximum Drain Source Voltage:

1200 V

Package Type:

HiP247

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

100 mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation:

270 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-10 V, +25 V

Length:

15.75mm

Width:

5.15mm

Typical Gate Charge @ Vgs:

105 nC @ 20 V

Transistor Material:

Si

Maximum Operating Temperature:

+200 °C

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

20.15mm

Forward Diode Voltage:

3.5V