N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA00DP-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

100 A

Maximum Drain Source Voltage:

30 V

Package Type:

PowerPAK SO-8

Series:

TrenchFET

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

1.35 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1.1V

Maximum Power Dissipation:

104 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-16 V, +20 V

Transistor Material:

Si

Width:

5.26mm

Typical Gate Charge @ Vgs:

147 nC @ 10 V

Length:

6.25mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Height:

1.12mm

Minimum Operating Temperature:

-55 °C