The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
Silicon N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC AUIRFP4568
Manufacturer:
Infineon
Manufacturer Part No:
AUIRFP4568
Enrgtech Part No:
ET21632777
Warranty:
Manufacturer
£ 5.26
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Channel Type:
N
Maximum Continuous Drain Current:
171 A
Maximum Drain Source Voltage:
150 V
Package Type:
TO-247AC
Series:
HEXFET
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.0059 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Number of Elements per Chip:
1
Transistor Material:
Silicon
