The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
N-Channel MOSFET, 18 A, 600 V, 3-Pin D2PAK IPB60R180P7ATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPB60R180P7ATMA1
Enrgtech Part No:
ET21632913
Warranty:
Manufacturer
£ 0.58
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
18 A
Maximum Drain Source Voltage:
600 V
Package Type:
D2PAK (TO-263)
Series:
CoolMOS™ P7
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
180 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Transistor Material:
Si
Number of Elements per Chip:
1
