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sqjq936e-t1_ge3 Quad Silicon Dual N-Channel MOSFET, 100 A, 40 V, 4-Pin PowerPAK 8 x 8L Vishay SQJQ936E-T1_GE3
sqjq936e-t1_ge3 Quad Silicon Dual N-Channel MOSFET, 100 A, 40 V, 4-Pin PowerPAK 8 x 8L Vishay SQJQ936E-T1_GE3
sqjq936e-t1_ge3 Quad Silicon Dual N-Channel MOSFET, 100 A, 40 V, 4-Pin PowerPAK 8 x 8L Vishay SQJQ936E-T1_GE3
The Vishay automotive dual N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature. AEC Q101 qualified
ROHS compliant
Vishay

Quad Silicon Dual N-Channel MOSFET, 100 A, 40 V, 4-Pin PowerPAK 8 x 8L SQJQ936E-T1_GE3

Manufacturer:
Vishay
Manufacturer Part No:
SQJQ936E-T1_GE3
Enrgtech Part No:
ET26056189
Warranty:
Manufacturer
£ 1.01

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Channel Type:

Dual N

Maximum Continuous Drain Current:

100 A

Maximum Drain Source Voltage:

40 V

Package Type:

PowerPAK 8 x 8L

Mounting Type:

PCB Mount

Pin Count:

4

Channel Mode:

Enhancement

Transistor Material:

Silicon

Number of Elements per Chip:

4

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