The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Pb-free plating Halogen free mold compound
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Pb-free plating Halogen free mold compound
Silicon N-Channel MOSFET, 37.9 A, 650 V, 3-Pin TO-220 FP IPA60R099P6XKSA1
Manufacturer:
InfineonManufacturer Part No:
IPA60R099P6XKSA1
Enrgtech Part No:
ET21632790
Warranty:
Manufacturer
£ 2.32
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Channel Type:
N
Maximum Continuous Drain Current:
37.9 A
Maximum Drain Source Voltage:
650 V
Series:
CoolMOS™
Package Type:
TO-220 FP
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.099 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Transistor Material:
Silicon
Number of Elements per Chip:
1
