N-Channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK IRFU1N60APBF

Channel Type:

N

Maximum Continuous Drain Current:

1.4 A

Maximum Drain Source Voltage:

600 V

Package Type:

IPAK (TO-251)

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

7 Ω

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

36 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Transistor Material:

Si

Length:

6.73mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

14 nC @ 10 V

Width:

2.39mm

Height:

6.22mm

Minimum Operating Temperature:

-55 °C