The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
Silicon N-Channel MOSFET, 4 A, 700 V, 3-Pin IPAK IPSA70R1K4P7SAKMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPSA70R1K4P7SAKMA1
Enrgtech Part No:
ET21632823
Warranty:
Manufacturer
£ 0.13
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Channel Type:
N
Maximum Continuous Drain Current:
4 A
Maximum Drain Source Voltage:
700 V
Package Type:
IPAK (TO-251)
Series:
CoolMOS™
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
1.4 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.5V
Transistor Material:
Silicon
Number of Elements per Chip:
1
