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ipd80r2k8ceatma1 Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin DPAK Infineon IPD80R2K8CEATMA1
ipd80r2k8ceatma1 Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin DPAK Infineon IPD80R2K8CEATMA1
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Infineon

Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin DPAK IPD80R2K8CEATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD80R2K8CEATMA1
Enrgtech Part No:
ET21632806
Warranty:
Manufacturer
£ 0.24

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Channel Type:

N

Maximum Continuous Drain Current:

1.9 A

Maximum Drain Source Voltage:

80 V

Series:

CoolMOS™

Package Type:

TO-252

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

2.8 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.9V

Number of Elements per Chip:

1

Transistor Material:

Silicon

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