


N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC IRFP064NPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRFP064NPBF
Enrgtech Part No:
ET14089498
Warranty:
Manufacturer
£ 1.93
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Channel Type:
N
Maximum Continuous Drain Current:
110 A
Maximum Drain Source Voltage:
55 V
Package Type:
TO-247AC
Series:
HEXFET
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
8 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
200 W