Infineon OptiMOS™ N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IPD30N06S2L13ATMA4

Infineon OptiMOS™ N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IPD30N06S2L13ATMA4

Manufacturer:
Manufacturer Part No:
IPD30N06S2L13ATMA4
Enrgtech Part No:
ET21696018
Warranty:
Manufacturer
£ 0.5000
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Channel Type:
N
Maximum Continuous Drain Current:
30 A
Maximum Drain Source Voltage:
55 V
Package Type:
DPAK (TO-252)
Series:
OptiMOS™
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.013 Ω
Maximum Gate Threshold Voltage:
2V
Number of Elements per Chip:
1
pdf icon
A700000007367681.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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