The Infineon design of Cool MOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Silicon N-Channel MOSFET, 2.5 A, 800 V, 3-Pin SOT-223 IPN80R2K4P7ATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPN80R2K4P7ATMA1
Enrgtech Part No:
ET21632814
Warranty:
Manufacturer
£ 0.17
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
2.5 A
Maximum Drain Source Voltage:
800 V
Package Type:
SOT-223
Series:
CoolMOS™
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.0024 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.5V
Number of Elements per Chip:
1
Transistor Material:
Silicon
