PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Dual P-Channel MOSFET, 2.6 A, 20 V, 6-Pin MicroFET Thin FDME1023PZT
Manufacturer:
onsemi
Manufacturer Part No:
FDME1023PZT
Enrgtech Part No:
ET14519195
Warranty:
Manufacturer
£ 0.24
Checking for live stock
Channel Type:
P
Maximum Continuous Drain Current:
2.6 A
Maximum Drain Source Voltage:
20 V
Package Type:
MicroFET Thin
Series:
PowerTrench
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
530 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
0.4V
Maximum Power Dissipation:
1.4 W
Transistor Configuration:
Isolated
