Dual P-Channel MOSFET, 2.3 A, 20 V, 8-Pin SOIC IRF7104PBF

Channel Type:

P

Maximum Continuous Drain Current:

2.3 A

Maximum Drain Source Voltage:

20 V

Series:

HEXFET

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

400 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

2 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-12 V, +12 V

Transistor Material:

Si

Width:

4mm

Typical Gate Charge @ Vgs:

9.3 nC @ 10 V

Number of Elements per Chip:

2

Maximum Operating Temperature:

+150 °C

Length:

5mm

Height:

1.5mm

Minimum Operating Temperature:

-55 °C