The Infineon OptiMOS™ 5 N-channel power MOSFET has 25 V drain source voltage (VDS) & 153 A drain current (ID). It's ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, makes it the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. It saves overall system costs by reducing the number of phases in multiphase converters and reduce power losses and increase efficiency for all load conditions.
Optimized for high performance buck converter
Monolithic integrated schottky like diode
Very low on-resistance RDS(on)@VGS = 4.5V
100% avalanche tested
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
Monolithic integrated schottky like diode
Very low on-resistance RDS(on)@VGS = 4.5V
100% avalanche tested
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
N-Channel MOSFET, 153 A, 25 V, 8-Pin SuperSO8 5 x 6 BSC018NE2LSIATMA1
Manufacturer:
Infineon
Manufacturer Part No:
BSC018NE2LSIATMA1
Enrgtech Part No:
ET24126071
Warranty:
Manufacturer
£ 0.30
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
153 A
Maximum Drain Source Voltage:
25 V
Package Type:
SuperSO8 5 x 6
Series:
OptiMOS™
Mounting Type:
Surface Mount
Pin Count:
8
Number of Elements per Chip:
1
