The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.
Industry’s lowest RDS(on) x area
Industry’s best FoM
Ultra low gate charge
100% avalanche tested
Zener protected
Industry’s best FoM
Ultra low gate charge
100% avalanche tested
Zener protected
N-Channel MOSFET, 6 A, 1200 V, 3-Pin TO-247 STW8N120K5
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STW8N120K5
Enrgtech Part No:
ET17728284
Warranty:
Manufacturer
£ 6.71
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Channel Type:
N
Maximum Continuous Drain Current:
6 A
Maximum Drain Source Voltage:
1200 V
Series:
MDmesh K5
Package Type:
TO-247
Mounting Type:
Through Hole
Pin Count:
3
Channel Mode:
Enhancement
Number of Elements per Chip:
1
