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ipb017n10n5lfatma1 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB017N10N5LFATMA1
ipb017n10n5lfatma1 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB017N10N5LFATMA1
Combining a low RDS(on) with a wide safe operating area (SOA) OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. Summary of Features •Combination of low R DS(on) and wide safe operating area (SOA)

•High max. pulse current

•High continuous pulse current Benefits •Rugged linear mode operation

•Low conduction losses

•Higher in-rush current enabled for faster start-up and shorter down time Potential Applications •Telecom

•Battery management
Infineon

N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB017N10N5LFATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB017N10N5LFATMA1
Enrgtech Part No:
ET21696013
Warranty:
Manufacturer
£ 6.13

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Channel Type:

N

Maximum Continuous Drain Current:

180 A

Maximum Drain Source Voltage:

100 V

Series:

OptiMOS™

Package Type:

D2PAK-7

Mounting Type:

Surface Mount

Pin Count:

7

Maximum Drain Source Resistance:

0.0017 Ω

Maximum Gate Threshold Voltage:

4.1V

Number of Elements per Chip:

1

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