

Combining a low RDS(on) with a wide safe operating area (SOA)
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Summary of Features
•Combination of low R DS(on) and wide safe operating area (SOA)
•High max. pulse current
•High continuous pulse current Benefits •Rugged linear mode operation
•Low conduction losses
•Higher in-rush current enabled for faster start-up and shorter down time Potential Applications •Telecom
•Battery management
•High max. pulse current
•High continuous pulse current Benefits •Rugged linear mode operation
•Low conduction losses
•Higher in-rush current enabled for faster start-up and shorter down time Potential Applications •Telecom
•Battery management

N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB017N10N5LFATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPB017N10N5LFATMA1
Enrgtech Part No:
ET21696013
Warranty:
Manufacturer
£ 6.13
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
180 A
Maximum Drain Source Voltage:
100 V
Series:
OptiMOS™
Package Type:
D2PAK-7
Mounting Type:
Surface Mount
Pin Count:
7
Maximum Drain Source Resistance:
0.0017 Ω
Maximum Gate Threshold Voltage:
4.1V
Number of Elements per Chip:
1