The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency
Low capacitances
Source sensing pin for increased efficiency
Silicon N-Channel MOSFET, 45 A, 650 V, 4-Pin HiP247-4 SCTWA35N65G2V-4
Manufacturer:
STMicroelectronics
Manufacturer Part No:
SCTWA35N65G2V-4
Enrgtech Part No:
ET22535212
Warranty:
Manufacturer
£ 9.19
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
45 A
Maximum Drain Source Voltage:
650 V
Package Type:
HiP247-4
Mounting Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance:
0.067 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Transistor Material:
Silicon
Number of Elements per Chip:
1
