DiodesZetex DMN2014LHAB-7 Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

Channel Type:

N

Maximum Continuous Drain Current:

9.3 A

Maximum Drain Source Voltage:

20 V

Package Type:

U-DFN2030

Mounting Type:

Surface Mount

Pin Count:

6

Maximum Drain Source Resistance:

28 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1.1V

Maximum Power Dissipation:

1.7 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-12 V, +12 V

Transistor Material:

Si

Typical Gate Charge @ Vgs:

16 nC @ 4.5 V

Length:

3.05mm

Maximum Operating Temperature:

+150 °C

Width:

2.05mm

Number of Elements per Chip:

2

Minimum Operating Temperature:

-55 °C

Height:

0.6mm