The Infineon OptiMOS power MOSFET offers benchmark solutions by enabling highest power density and energy efficiency, both in stand by and full operation. It offers drain source on-state resistance of 0.45 m Ohm.
Highest efficiency
Highest power density in SuperSO8 package
Reduction of overall system costs
RoHS compliant
Halogen free
Highest power density in SuperSO8 package
Reduction of overall system costs
RoHS compliant
Halogen free
N-Channel MOSFET, 479 A, 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1
Manufacturer:
InfineonManufacturer Part No:
BSC004NE2LS5ATMA1
Enrgtech Part No:
ET22793318
Warranty:
Manufacturer
£ 2.03
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Channel Type:
N
Maximum Continuous Drain Current:
479 A
Maximum Drain Source Voltage:
25 V
Series:
OptiMOS™
Package Type:
TDSON
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
0.00045 Ω
Maximum Gate Threshold Voltage:
1.5V
Number of Elements per Chip:
1
