P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB IRF5305PBF

Channel Type:

P

Maximum Continuous Drain Current:

31 A

Maximum Drain Source Voltage:

55 V

Series:

HEXFET

Package Type:

TO-220AB

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

60 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

110 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

63 nC @ 10 V

Width:

4.69mm

Transistor Material:

Si

Maximum Operating Temperature:

+175 °C

Length:

10.54mm

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

8.77mm

Forward Diode Voltage:

1.3V