The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDSon (<1.15 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Silicon N-Channel MOSFET, 100 A, 25 V, 4-Pin PQFN 5 x 6 IRFH5250TRPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRFH5250TRPBF
Enrgtech Part No:
ET21632842
Warranty:
Manufacturer
£ 0.43
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
100 A
Maximum Drain Source Voltage:
25 V
Package Type:
PQFN 5 x 6
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
4
Maximum Drain Source Resistance:
0.00115 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.35V
Transistor Material:
Silicon
Number of Elements per Chip:
1
