The STMicroelectronics Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Worldwide best FOM
Ultra low gate charge
100 percent avalanche tested
Ultra low gate charge
100 percent avalanche tested
N-Channel MOSFET, 5 A, 800 V, 3-Pin TO-220 STP80N1K1K6
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STP80N1K1K6
Enrgtech Part No:
ET25872675
Warranty:
Manufacturer
£ 1.84
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Channel Type:
N
Maximum Continuous Drain Current:
5 A
Maximum Drain Source Voltage:
800 V
Series:
STP80N
Package Type:
TO-220
Mounting Type:
Through Hole
Pin Count:
3
Channel Mode:
Enhancement
Number of Elements per Chip:
1
