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ipsa70r2k0p7sakma1 N-Channel MOSFET Transistor & Diode, 5.7 A, 700 V, 3-Pin IPAK Infineon IPSA70R2K0P7SAKMA1
ipsa70r2k0p7sakma1 N-Channel MOSFET Transistor & Diode, 5.7 A, 700 V, 3-Pin IPAK Infineon IPSA70R2K0P7SAKMA1
The Infineon Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS P7 is an optimized platform tailored to target cost sensitive application in consumer market such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs. Extremely low losses due rcovery low FOMRDS(on)*Qgand RDS(on)*Eoss
Excellent thermal behavior
Integrated ESD protection diode
Low switching losses(Eoss)
Product validationa cc.JEDEC Standard
Cost competitive technology
Lower temperature
High ES Druggedness
Enables efficiency gainsat higher switching frequencies
Enableshighpowerdensitydesignsandsmallformfactors
Infineon

N-Channel MOSFET Transistor & Diode, 5.7 A, 700 V, 3-Pin IPAK IPSA70R2K0P7SAKMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPSA70R2K0P7SAKMA1
Enrgtech Part No:
ET21626915
Warranty:
Manufacturer
£ 0.12

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Channel Type:

N

Maximum Continuous Drain Current:

5.7 A

Maximum Drain Source Voltage:

700 V

Package Type:

IPAK (TO-251)

Series:

CoolMOS™ P7

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

2 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Number of Elements per Chip:

1

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